Novosibirsk university develops vacuum microelectronics for space use
In short
Scientists at Novosibirsk State Technical University have developed the design and production technology for vacuum microelectronics devices meant to work in extreme conditions, the tech outlet iXBT reported. The devices send electrons through a miniature vacuum channel instead of a semiconductor, which the university says makes them resistant to radiation and sharp temperature swings. TASS reported that such vacuum microelectronics has been developed in Russia and is needed in space, without naming the developer.
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Scientists at Novosibirsk State Technical University have developed the design and production technology for vacuum microelectronics devices intended to operate in extreme conditions, the technology outlet iXBT reported. In these devices, unlike conventional semiconductors, electrons travel through a miniature vacuum channel. The work is being carried out under the Prioritet-2030 programme, and the components are described as suitable for radio-electronic equipment in space and defence hardware. Separately, the state news agency TASS reported that vacuum microelectronics has been developed in Russia and is needed in space, without naming a developer or institution. [ 1 , 2 ]
According to iXBT, the main advantage of vacuum microelectronics is resistance to radiation, high temperatures and sharp temperature changes. The components are described as having a low threshold voltage and a relatively simple design. NSTU said it has already produced a working prototype with a vertical vacuum channel, and the university said such transistors and diodes could in principle allow powerful and fast devices for high and ultra-high frequencies, including radio communication and radar systems. In parallel, university specialists are working on vacuum components with nanoscale gaps and nanoantennas designed for the terahertz range. [ 2 ]
The university said the manufacturing technology is new and that it has filed an application with Rospatent for legal protection, according to iXBT. In the longer term, the outlet reported, such devices could be used in equipment that must operate reliably under radiation exposure and other extreme loads. TASS framed the development in the same terms, saying the instruments are needed in space because of their resistance to radiation and sharp temperature changes, but did not identify the developers. [ 1 , 2 ]
Why it matters
The documents present the technology as intended for radio-electronic equipment in spacecraft and defence hardware, sectors where resistance to radiation and temperature extremes matters. iXBT reports that a working prototype exists and that a patent application has been filed, but the documents give no information on production plans, customers or timelines.
Key facts
- Scientists at Novosibirsk State Technical University developed the design and manufacturing technology for vacuum microelectronics devices for extreme operating conditions, according to iXBT. [ 2 ]
- In these devices electrons move through a miniature vacuum channel rather than through a conventional semiconductor, iXBT reported. [ 2 ]
- The university says the main advantage is resistance to radiation, high temperatures and sharp temperature changes. [ 1 , 2 ]
- The work is being carried out under the Prioritet-2030 programme, according to iXBT. [ 2 ]
- NSTU has produced a working prototype with a vertical vacuum channel, iXBT reported. [ 2 ]
- The university said the technology is new and that it has filed a patent application with Rospatent. [ 2 ]
- TASS reported that vacuum microelectronics devices have been developed in Russia and are needed in space for their resistance to radiation and temperature swings. [ 1 ]
Confirmed by several sources
- Vacuum microelectronics devices intended for operation in space have been developed in Russia, with radiation resistance and tolerance of sharp temperature changes given as the reason they are suited to that use. [ 1 , 2 ]
- The devices work by moving electrons through a miniature vacuum channel, and their stated advantages are resistance to radiation, high temperatures and temperature swings. [ 1 , 2 ]
Still unclear
- TASS attributes the development to Russia in general and does not name the university, while iXBT names Novosibirsk State Technical University as the developer. Only iXBT names the institution, so the identification of TASS's unnamed developers with NSTU is a single-source claim.
- No information is given on production volumes, customers, funding beyond the programme name, or when the devices might be used in actual spacecraft or defence equipment. The documents describe a prototype and a patent application only, and do not state any commercial or deployment plans.
- The documents do not say who is funding or ordering the work beyond the Prioritet-2030 programme. Neither document provides details on the financing or on any institutional partner.